advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 600v fast switching characteristics r ds(on) 12 simple drive requirement i d 160ma description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current, v gs @ 10v ma i d @t a =100 continuous drain current, v gs @ 10v ma i dm pulsed drain current 1 ma p d @t a =25 total power dissipation w t stg t j operating junction temperature range thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 150 /w data & specifications subject to change without notice 600 parameter 201023073-1/4 storage temperature range -55 to 150 rohs-compliant product -55 to 150 300 0.83 100 160 parameter rating ap01l60at 30 g d s to-92 g d s advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. the to-92 package is widely used for commercial-industrial applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 600 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.8 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.5a - - 12 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.5a - 0.8 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =0.1a - 6.0 10 nc q gs gate-source charge v ds =480v - 1.0 - nc q gd gate-drain ("miller") charge v gs =10v - 2.5 - nc t d(on) turn-on delay time 2 v dd =300v - 6.6 - ns t r rise time i d =1a - 5.0 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 11.7 - ns t f fall time r d =300 - 9.2 - ns c iss input capacitance v gs =0v - 170 270 pf c oss output capacitance v ds =25v - 30.7 - pf c rss reverse transfer capacitance f=1.0mhz - 5.1 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 160 ma v sd forward on voltage 2 i s =160ma, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test device or system are not authorized. 2/4 this product is an electrostatic sensitive, please handle with caution. this product has been qualified for consumer market. applications or uses as criterial component in life support ap01l60at 30v 100
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap01l60a t 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =0.5a v gs =10v 0 0.5 1 1.5 0122436 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.5v 5.0v v gs =4.5v 0 0.25 0.5 0.75 1 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 5.0v 4.5v v gs =4.0v 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 1 2 3 4 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum drain current v.s. fig 10. typical power dissipation case temperature fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap01l60at 0 4 8 12 16 02468 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.1a v ds =480v 1 10 100 1000 1 101928 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 0.2 0.4 0.6 0.8 1 0 50 100 150 t a , case temperature ( o c ) p d (w) 0 0.05 0.1 0.15 0.2 25 50 75 100 125 150 t a , case temperature ( o c ) i d , drain current (a)
package outline : to-92 millimeters min nom max a 4.32 4.83 5.34 d 4.1 4.8 5.3 e 3.1 3.9 4.7 b ---- 0.38 ----- l 12.7 --- ---- e1 ---- 1.27 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-92 s ymbol s advanced power electronics corp. e part numbe r 01l60at ywwsss e1 l a seating plane b d package code date code (ywwsss) y last digit of the year ww week ssssequence
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